US Patent Issued to TAIWAN SEMICONDUCTOR MANUFCATURING on April 7 for "Gate-all-around device with protective dielectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,779, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFCATURING Co. LTD. (Hsinchu, Taiwan).

"Gate-all-around device with protective dielectric layer and method of forming the same" was invented by Cheng-Ting Chung (Hsinchu, Taiwan), Yi-Bo Liao (Hsinchu, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; semiconductor layers over the substrate, wherein the semiconductor layers are separate from each other and are stacked up alo...