US Patent Issued to Tokyo Electron on April 7 for "Method to form silicon-germanium nanosheet structures" (New York Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,788, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method to form silicon-germanium nanosheet structures" was invented by Jeffrey Smith (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a tier of transistors and devices. Each transistor includes a respective channel structure including a first epitaxially grown semiconductor material, a respective shell structure all around a respective middle portion of the respective channel structure, a respective gate structure all around the respective shell structure, and respective source/drain (S/D) structures on respective opposing ends of ...