ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,786, issued on April 7, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"Field effect transistor structures" was invented by Josephine B. Chang (Bedford Hills, N.Y.), Bruce B. Doris (Slingerlands, N.Y.), Michael A. Guillorn (Cold Springs, N.Y.), Isaac Lauer (Yorktown Heights, N.Y.) and Xin Miao (Guilderland, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Field effect transistors include a stack of nanowires of vertically arranged channel layers. A source and drain region is disposed at respective ends of the vertically arranged channel layers. A gate stack is formed over, around, and between the vertically arranged channel...