ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,732, issued on Nov. 3, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Method for forming semiconductor structure" was i... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,733, issued on Nov. 3, was assigned to Imec vzw (Leuven, Belgium). "Method for forming an interconnection structure" was invented by Anshul ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,734, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with liner layer ha... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,735, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with porous layer and method ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,736, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with porous layer and method ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,737, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of manufacturing semiconductor structure" w... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,738, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor devices and data storage syst... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,739, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Super via within backside level" was invented ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,740, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Integrated circuit device including a power ra... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,741, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.). "Structure with cavity around through semiconductor via" was... Read More