US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "Structure with cavity around through semiconductor via" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,741, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.).

"Structure with cavity around through semiconductor via" was invented by Dewei Xu (Clifton Park, N.Y.), Ravi Prakash Srivastava (Clifton Park, N.Y.) and Zhuojie Wu (Port Chester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a through semiconductor via (TSV) in a semiconductor substrate. The structure also includes a cavity including a first cavity portion in the semiconductor substrate and surrounding a middle section of the TSV and in direct contact with the TSV. The cavity also includes a plurality of second cavity portions in the semiconduct...