Exclusive

Publication

Byline

Location

US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor packaging having thermal interfacial material film including epoxy and liquid metal filler" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,768, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor packaging having thermal interfa... Read More


US Patent Issued to ARIECA on Nov. 3 for "Method of manufacture of a thermal interface material, a thermal interface material formed therefrom, and an integrated circuit formed therefrom" (Pennsylvania, Connecticut Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,769, issued on Nov. 3, was assigned to ARIECA INC. (Pittsburgh). "Method of manufacture of a thermal interface material, a thermal interface... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor package and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,770, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package and method of fabricatin... Read More


US Patent Issued to AMOSENSE on Nov. 3 for "Inverter power module" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,771, issued on Nov. 3, was assigned to AMOSENSE Co. LTD. (Cheonan-si, South Korea). "Inverter power module" was invented by Kyungwhan Woo (C... Read More


US Patent Issued to Infineon Technologies on Nov. 3 for "Package with electrically insulating and thermally conductive layer on top of electronic component" (Malaysian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,772, issued on Nov. 3, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Package with electrically insulating and thermally co... Read More


US Patent Issued on Nov. 3 for "Method for fabricating semiconductor devices using through-die laser reflow and backside thermal layer stack formation" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,773, issued on Nov. 3. "Method for fabricating semiconductor devices using through-die laser reflow and backside thermal layer stack formati... Read More


US Patent Issued to ROHM on Nov. 3 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,774, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Katsuhiko Yoshihara (Kyoto, Japa... Read More


US Patent Issued on Nov. 3 for "Semiconductor package structure having thermal management structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,775, issued on Nov. 3. "Semiconductor package structure having thermal management structure" was invented by Chun-Ming Lin (Hsinchu County, ... Read More


US Patent Issued to Sony Semiconductor Solutions on Nov. 3 for "Sensor device with improved heat dissipation" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,776, issued on Nov. 3, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Sensor device with improved heat dissipation" ... Read More


US Patent Issued to HITACHI ENERGY on Nov. 3 for "Flow inverter and power semiconductor component" (Swiss Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,777, issued on Nov. 3, was assigned to HITACHI ENERGY LTD (Zurich). "Flow inverter and power semiconductor component" was invented by Lluis ... Read More