US Patent Issued on Nov. 3 for "Method for fabricating semiconductor devices using through-die laser reflow and backside thermal layer stack formation" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,773, issued on Nov. 3.

"Method for fabricating semiconductor devices using through-die laser reflow and backside thermal layer stack formation" was invented by Joonyoung Choi (Incheon, South Korea), Woosoon Kim (Incheon, South Korea), Seongkwon Hong (Incheon, South Korea) and Gayeon Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect st...