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US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor devices including channel layers having side surfaces with (111) crystal orientation" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,805, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices including channel laye... और पढ़ें


US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Aug. 25 for "Memory, gate-all-around field-effect transistor, and manufacturing method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,806, issued on Aug. 25, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Memory, gate-all-around field-effect transistor, ... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Gate dielectric layers for stacked multi-gate device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,807, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Gate dielectric layers for stac... और पढ़ें


US Patent Issued to Zinite on Aug. 25 for "Source/drain channel interface with nitrogen-containing oxide" (Canadian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,808, issued on Aug. 25, was assigned to Zinite Corp. (Edmonton, Canada). "Source/drain channel interface with nitrogen-containing oxide" wa... और पढ़ें


US Patent Issued to Semiconductor Energy Laboratory on Aug. 25 for "Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,809, issued on Aug. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Metal oxide, formation method of m... और पढ़ें


US Patent Issued to Hon Young Semiconductor on Aug. 25 for "Semiconductor device and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,810, issued on Aug. 25, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan). "Semiconductor device and forming method ther... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Lightly-doped channel extensions" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,811, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Lightly-doped channel extension... और पढ़ें


US Patent Issued to Nexperia on Aug. 25 for "Semiconductor power device with improved ruggedness" (Dutch, German Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,813, issued on Aug. 25, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Semiconductor power device with improved ruggedness" was in... और पढ़ें


US Patent Issued to Magnachip Semiconductor on Aug. 25 for "Fast recovery diode and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,814, issued on Aug. 25, was assigned to Magnachip Semiconductor Ltd. (Cheongju-si, South Korea). "Fast recovery diode and method for manufa... और पढ़ें


US Patent Issued to Silanna Asia on Aug. 25 for "Power device integration on a common substrate" (Florida, California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,815, issued on Aug. 25, was assigned to Silanna Asia Pte Ltd (Singapore). "Power device integration on a common substrate" was invented by ... और पढ़ें