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US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Capacitor having dielectric comprising rutile-phase titanium oxide and magnesium, method of preparing the same, and electronic device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,314, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Capacitor having dielectric comprising ruti... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Metal-insulator-metal capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,315, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Metal-insulator-metal capacitors"... Read More


US Patent Issued to SK hynix on Nov. 3 for "Capacitor of semiconductor device and distributed model circuit for the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,316, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Capacitor of semiconductor device and distributed model circ... Read More


US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Capacitor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,317, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Capacitor device" was invented by Kazuo Enomoto (Matsumoto... Read More


US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,318, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manufac... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Schottky barrier diode" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,319, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Schottky barrier diode" was inven... Read More


US Patent Issued to Silanna UV Technologies on Nov. 3 for "Semiconductor device" (Australian Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,320, issued on Nov. 3, was assigned to Silanna UV Technologies Pte Ltd (Singapore). "Semiconductor device" was invented by Petar Atanackovic... Read More


US Patent Issued to STMicroelectronics (Rousset) on Nov. 3 for "Method for manufacturing a Schottky diode and corresponding integrated circuit" (French Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,321, issued on Nov. 3, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France). "Method for manufacturing a Schottky diode and co... Read More


US Patent Issued to GlobalFoundries U.S. on Nov. 3 for "Vertical heterojunction bipolar transistor" (New York, Vermont Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,322, issued on Nov. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Vertical heterojunction bipolar transistor" was invented by... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Multiple fin device configured to operate as individual transistor and method" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,323, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Multiple fin device configured to operate as individual trans... Read More