US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Schottky barrier diode" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,319, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Schottky barrier diode" was invented by Hong-Shyang Wu (Taipei, Taiwan) and Kuo-Ming Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Schottky diode includes an n-type region, an anode disposed on the n-type region, a buried p-type region, and a shallow p-type region. An interface between the anode and the n-type region forms a Schottky barrier. An n-type channel portion of the n-type region is disposed between the buried p-type region and the shallow p-type region. The anode may also contact the annular shallow p-type region...