US Patent Issued to GlobalFoundries U.S. on Nov. 3 for "Vertical heterojunction bipolar transistor" (New York, Vermont Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,322, issued on Nov. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Vertical heterojunction bipolar transistor" was invented by Judson R. Holt (Ballston Lake, N.Y.), Crystal R. Kenney (Waterford, N.Y.), Vibhor Jain (Clifton Park, N.Y.), John J. Pekarik (Underhill, Vt.), Mona Nafari (Clifton Park, N.Y.) and Jeffrey B. Johnson (North Hero, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to vertical heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector regio...