US Patent Issued to Silanna UV Technologies on Nov. 3 for "Semiconductor device" (Australian Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,320, issued on Nov. 3, was assigned to Silanna UV Technologies Pte Ltd (Singapore).

"Semiconductor device" was invented by Petar Atanackovic (Henley Beach South, Australia).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the techniques described herein relate to a multilayered semiconductor diode device including: a substrate including silicon carbide (SiC); an epitaxial drift layer including a first semiconductor oxide material or SiC on the substrate; an epitaxial channel layer including a second semiconductor oxide material on the epitaxial drift layer; and a metal layer above the epitaxial drift layer to form a Schottky barrier...