US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Metal-insulator-metal capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,315, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal-insulator-metal capacitors" was invented by Chieh-En Chen (Tainan, Taiwan), Chen-Hsien Lin (Tainan, Taiwan), Shyh-Fann Ting (Tainan, Taiwan), Wei-Chih Weng (Tainan, Taiwan), Hsing-Chih Lin (Tainan, Taiwan) and Dun-Nian Yaung (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fabricating a metal-insulator-metal (MIM) capacitor structure includes: forming a patterned metallization layer; disposing a dielectric material on the patterned metallization layer; etching one or more deep trenches through the dielectric material to the p...