US Patent Issued to FUJI ELECTRIC on Nov. 3 for "Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,318, issued on Nov. 3, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device" was invented by Yuichi Hashizume (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device has an active region, a first-conductivity-type region, and an edge termination region. The active region has first second-conductivity-type regions, a silicide film, and a first electrode; the edge termination region has a second second-conductivity-type region. The active region is configured by an ohmic region in which the sil...