ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,432, issued on Sept. 22, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Method for forming a drift region of a superjunct... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,433, issued on Sept. 22, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device" was invented by Noriaki Yao (Mat... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,434, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Field-effect transistor crescent-shaped di... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,435, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.). "SRAM with nanoribbon width modulation for greater read stabil... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,436, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Biaxial oxide direction compl... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,437, issued on Sept. 22, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Nitride semiconductor device and manufacturing method therefor" wa... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,438, issued on Sept. 22, was assigned to DB HiTek Co. Ltd. (Seoul, South Korea). "Semiconductor device" was invented by Yong Shin Han (Inc... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,439, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Frontside-to-backside connection with cut ... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,440, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gate structures in semiconductor ... और पढ़ें
ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,441, issued on Sept. 22, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China). "Semiconductor device and method f... और पढ़ें