US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Gate structures in semiconductor devices" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,440, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures in semiconductor devices" was invented by Shen-Yang Lee (Miaoli County, Taiwan), Hsiang-Pi Chang (New Taipei City, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming nanostructured channel regions on a fin or sheet base, forming gate openings surrounding the nanostructured channel regions, forming oxide layers on exposed surfaces of the nanostructured channel regions and th...