ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,439, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Frontside-to-backside connection with cut for stacked transistor" was invented by Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and James P Mazza (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a device layer having a first top source/drain (S/D), a second top S/D, a first bottom S/D, and a second bottom S/D. The semiconductor structure may further include a fir...