US Patent Issued to FUJI ELECTRIC on Sept. 22 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,433, issued on Sept. 22, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Semiconductor device" was invented by Noriaki Yao (Matsumoto-city, Japan) and Yuji Kumagai (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A drift layer has a SJ structure with a parallel pn layer; an n+-type buffer layer is between the parallel pn layer and an n++-type drain layer. An impurity concentration of the n+-type buffer layer is adjusted to be at least equal to that of n-type column regions of the parallel pn layer, to be relatively low in a portion facing the parallel pn layer and approach the impurity concentration of the n-type col...