US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 22 for "Biaxial oxide direction complementary field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,436, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Biaxial oxide direction complementary field effect transistor" was invented by Meng-Yu Lin (New Taipei City, Taiwan) and Chun-Fu Cheng (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor nanostructure over the substrate, a gate dielectric layer wrapping around the semiconductor nanostructure and a gate electrode over the gate dielectric layer. The semiconductor nanostructure includes a plurality of first strips extending along a first direction and a plurality of...