US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Sept. 22 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,441, issued on Sept. 22, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Semiconductor device and method for manufacturing the same" was invented by Qiyue Zhao (Suzhou City, China) and Yu Shi (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second nitride-based semiconductor layers, a first and a second electrodes, a first gate electrode, a first and a second field plates. The first field plate is disposed over the second nitride-based semiconductor layer and extends from a region between the first electrode and the first gate electrode to a region direc...