US Patent Issued to TDK on May 12 for "Light detection element having first and second ferromagnetic layers sandwiching spacer layer and receiving device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,569, issued on May 12, was assigned to TDK Corp. (Tokyo). "Light detection element having first and second ferromagnetic layers sandwiching ... Read More

US Patent Issued to International Business Machines on May 12 for "Beveled magneto-resistive random access memory pillar structure" (New York, New Jersey Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,570, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Beveled magneto-resistive random access memory... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Magnetoresistive memory device and integrated memory circuit" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,571, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetoresistive memory device and in... Read More

US Patent Issued to NEC on May 12 for "Quantum device comprising first connection portions within deformation suppression region defined by second connection portions" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,572, issued on May 12, was assigned to NEC Corp. (Tokyo). "Quantum device comprising first connection portions within deformation suppressio... Read More

US Patent Issued to International Business Machines on May 12 for "Trimming intermediate carbon layer to achieve nanometer scale patterning" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,573, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Trimming intermediate carbon layer to achieve ... Read More

US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 12 for "Phase change memory device" (French Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,574, issued on May 12, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris). "Phase change memory device" ... Read More

US Patent Issued to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on May 12 for "Resistive switching memory device including dual active layer and array including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,575, issued on May 12, was assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon, South Korea). "Resistive switching mem... Read More

US Patent Issued to Future Semiconductor Business on May 12 for "Fabrication of N-face III-nitrides by remote epitaxy" (Virginia Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,576, issued on May 12, was assigned to Future Semiconductor Business Inc (Charlottesville, Va.). "Fabrication of N-face III-nitrides by remo... Read More

US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on May 12 for "Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,577, issued on May 12, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea). "Method for preparing tran... Read More

US Patent Issued to ASM IP Holding on May 12 for "Substrate processing method" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,578, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Substrate processing method" was invented by Jeonghoon Ja... Read More

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