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US Patent Issued to EM MICROELECTRONIC-MARIN on June 23 for "Address decoder unit for a memory cell array using logic gates" (Czech, Swiss Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,007, issued on June 23, was assigned to EM MICROELECTRONIC-MARIN SA (Marin, Switzerland). "Address decoder unit for a memory cell array usi... Read More


US Patent Issued to UNITED MICROELECTRONICS on June 23 for "MRAM layout" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,008, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "MRAM layout" was invented by Wen-Liang Huan... Read More


US Patent Issued to SK HYNIX on June 23 for "Memory device and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,009, issued on June 23, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Memory device and operating method thereof" was invented b... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Magnetoresistive random-access memory (MRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,010, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetoresistive random-access memo... Read More


US Patent Issued to TechlFab on June 23 for "Memristive structure and memristive device" (German Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,011, issued on June 23, was assigned to TechlFab GmbH (Radenberg, Germany). "Memristive structure and memristive device" was invented by He... Read More


US Patent Issued to WUXI SMART MEMORIES TECHNOLOGIES on June 23 for "Operation method of ferroelectric memory" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,012, issued on June 23, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China). "Operation method of ferroelectric memory"... Read More


US Patent Issued to NANYA TECHNOLOGY on June 23 for "Memory devices including mechanism of protecting a vulnerable word line based on the previous refreshed word lines and relevant methods" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,013, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory devices including mechanism of protecting... Read More


US Patent Issued to Yangtze Memory Technologies on June 23 for "Methods for controlling bit line voltages in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,014, issued on June 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Methods for controlling bit line voltages in ... Read More


US Patent Issued to Kioxia on June 23 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,015, issued on June 23, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Tsuneo Inaba (Kamakura Kanagawa, Japan), Taka... Read More


US Patent Issued to Micron Technology on June 23 for "Detection and mitigation of attacks on row hammer mitigation circuits" (Idaho Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,016, issued on June 23, was assigned to Micron Technology Inc. (Boise, Idaho). "Detection and mitigation of attacks on row hammer mitigatio... Read More