ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,012, issued on June 23, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China).
"Operation method of ferroelectric memory" was invented by Feng Pan (Wuxi, China), Ding Mao (Wuxi, China) and Ke Ma (Wuxi, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a set of ferroelectric memory cells is provided. The method may include, in a first cycle, writing a first data bit to a first ferroelectric memory cell of the set of ferroelectric memory cells. The method may include, in the first cycle, writing a set of sign bits each having a first value to at least one second ferroelectric memory cell of the set of ferroel...