US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Magnetoresistive random-access memory (MRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,010, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetoresistive random-access memory (MRAM)" was invented by Yu-Der Chih (Hsin-Chu, Taiwan) and Chia-Fu Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for identifying an IM state of MRAM cell writes includes providing a plurality of MRAM cells and partitioning the plurality of MRAM cells into a plurality of groups including a first group and a second group. A first MRAM cell of the first group is written from a first state to a second state and a second MRAM cell of the second group is written from the first state to...