US Patent Issued to Kioxia on June 23 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,015, issued on June 23, was assigned to Kioxia Corp. (Tokyo).

"Memory device" was invented by Tsuneo Inaba (Kamakura Kanagawa, Japan), Takayuki Miyazaki (Tokyo) and Shinji Miyano (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a transistor, a capacitor, a plate line, and a bit line. The transistor includes an oxide semiconductor and includes a first end, a second end, and a gate. The capacitor includes a third end and a fourth end. The fourth end is coupled to the second end. The plate line is coupled to the third end. The bit line is coupled to the first end. A second voltage lower than a first volt...