US Patent Issued to UNITED MICROELECTRONICS on June 23 for "MRAM layout" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,008, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"MRAM layout" was invented by Wen-Liang Huang (Taoyuan City, Taiwan), Cheng-Tung Huang (Kaohsiung City, Taiwan), Ting-Hao Chang (Kaohsiung City, Taiwan) and Chien-Yu Ko (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MRAM layout is provided in the present invention, wherein each memory cell includes a first word line, a third word line and a second word line spaced apart on a substrate in order and extending in a first direction over active areas, a first MTJ in BEOL metal layers with one terminal connected to a second active area and...