ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,009, issued on June 23, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Memory device and operating method thereof" was invented by Tae Jung Ha (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and operating methods are disclosed. In an embodiment, a memory device may include a memory cell array including a plurality of memory cells, each of the plurality of memory cells configured to store a data value corresponding to read data to be read out through a plurality of conductive lines, and a read circuit connected to the plurality of conductive to generate the read data corresponding to the data value stor...