ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,255, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device sidewall of the gate... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,256, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with capping layer and meth... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,257, issued on July 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Stacked source or drain contact flyover" was invented by Sukru ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,258, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Dipole patterning for CMOS devices"... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,259, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo). "Device and method of forming 3D U-shaped nanosheet cfet" was invented... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,260, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Leakage reduction methods and struc... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,261, issued on July 21, was assigned to Imec vzw (Leuven, Belgium). "Integrated circuit chips comprising forksheet devices connected with b... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,262, issued on July 21, was assigned to DENSO Corp. (Kariya-city, Japan). "Semiconductor device having drive circuit configured to output v... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,263, issued on July 21, was assigned to ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP (Toronto). "Dual p-body dose reverse-conducting (DPD... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,264, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "PJ junction device structure in semiconducto... Read More