US Patent Issued to NANYA TECHNOLOGY on July 21 for "Semiconductor device with capping layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,256, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with capping layer and method for fabricating the same" was invented by Tse-Yao Huang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and having a U-shaped cross-sectional profile; a first work function laye...