US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Leakage reduction methods and structures thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,260, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Leakage reduction methods and structures thereof" was invented by Chia-Sheng Fan (Hsinchu County, Taiwan), Chun-Yen Lin (Hsinchu City, Taiwan), Tung-Heng Hsieh (Hsinchu County, Taiwan) and Bao-Ru Young (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and structure for mitigating leakage current in devices that include a continuous active region. In some embodiments, a threshold voltage at the cell boundary is increased by changing a photomask logic operation (LOP) to reverse a threshold voltage type at the cell bound...