US Patent Issued to ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL on July 21 for "Dual p-body dose reverse-conducting (DPD-RC) IGBT structure" (California Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,263, issued on July 21, was assigned to ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP (Toronto).

"Dual p-body dose reverse-conducting (DPD-RC) IGBT structure" was invented by Zhibo Guo (San Jose, Calif.), Karthik Padmanabhan (Palo Alto, Calif.), Lingpeng Guan (San Jose, Calif.) and Madhur Bobde (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reverse conducting IGBT comprising a substrate having a top side and a back side opposite the top side, one or more IGBT top side cells, one or more diode top side cells including, an IGBT back side collector region is formed in the back side of the substrate underneath the one or more IGBT ...