US Patent Issued to SAMSUNG ELECTRONICS on July 21 for "Semiconductor device sidewall of the gate semiconductor layer including a plurality of surfaces having different slopes" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,255, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device sidewall of the gate semiconductor layer including a plurality of surfaces having different slopes" was invented by Junhyuk Park (Suwon-si, South Korea), Jaejoon Oh (Suwon-si, South Korea), Sunkyu Hwang (Suwon-si, South Korea), Boram Kim (Suwon-si, South Korea), Jongseob Kim (Suwon-si, South Korea), Joonyong Kim (Suwon-si, South Korea) and Injun Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a barrier layer on a channel layer, a gate electrode on the barrier layer, a ga...