ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,203, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Merged-PiN schottky (MPS) diode having a doped region surro... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,204, issued on July 21, was assigned to SUN YAT-SEN UNIVERSITY (Guangdong, China). "GaN-based trench metal oxide Schottky barrier diode and... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,205, issued on July 21, was assigned to Canon K.K. (Tokyo). "Resonant tunneling diode, oscillator and detection system" was invented by Tat... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,206, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Heterojunction bipolar transistors including an intrinsic... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,207, issued on July 21, was assigned to NXP B.V. (Eindhoven, Netherlands). "Semiconductor device with a monocrystalline extrinsic base and ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,208, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device" was invented by Tomohito Kudo (Tokyo). A... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,209, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device for improving on voltage and satura... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,210, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Manufacturing method for semiconductor device" was invented by ... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,212, issued on July 21. "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxia... और पढ़ें
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,213, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-chu, Taiwan). "FinFETs with low source/drain cont... और पढ़ें