US Patent Issued to Mitsubishi Electric on July 21 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,208, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Tomohito Kudo (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate (1) includes a main region (2) and a sense region (3) having a smaller operation region area than that of the main region (2). An IGBT is formed in the main region (2). A MOSFET is formed as a sense device in the sense region (3) and has a gate electrode (15) connected to a gate electrode (15) of the IGBT. A front surface electrode (5) is formed on a front surface of the semiconductor substrate (1) in the main region (2). A rear surface electrod...