US Patent Issued to FUJI ELECTRIC on July 21 for "Semiconductor device for improving on voltage and saturation voltage" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,209, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Semiconductor device for improving on voltage and saturation voltage" was invented by Koh Yoshikawa (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor substrate; gate trench portions; an emitter electrode; a mesa portion; an emitter region of a first conductivity type provided on an upper surface of the mesa portion and in contact with the gate trench portions; a contact region of a second conductivity type provided on the upper surface of the mesa portion; a base region of a second condu...