US Patent Issued to NXP on July 21 for "Semiconductor device with a monocrystalline extrinsic base and method therefor" (Dutch, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,207, issued on July 21, was assigned to NXP B.V. (Eindhoven, Netherlands).

"Semiconductor device with a monocrystalline extrinsic base and method therefor" was invented by Ljubo Radic (Gilbert, Ariz.), Jay Paul John (Chandler, Ariz.), James Albert Kirchgessner (Tempe, Ariz.) and Johannes Josephus Theodorus Marinus Donkers (Valkenswaard, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a collector region formed within the semiconductor substrate in a first semiconductor region having an upper surface and a collector sidewall, a base region disposed over the collector region, a seed ...