US Patent Issued to Nexperia on July 21 for "Merged-PiN schottky (MPS) diode having a doped region surrounding a plurality of wells, and a method for manufacturing the same" (Dutch Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,203, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Merged-PiN schottky (MPS) diode having a doped region surrounding a plurality of wells, and a method for manufacturing the same" was invented by Massimo Cataldo Mazzillo (Nijmegen, Netherlands) and Sonke Habenicht (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MPS diode and a manufacturing method is provided. The diode includes a semiconductor body including an active area and an adjacent termination area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second type different from the first cond...