US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "FinFETs with low source/drain contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,213, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-chu, Taiwan).

"FinFETs with low source/drain contact resistance" was invented by Yu-Lien Huang (Jhubei City, Taiwan) and Tung Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, with the insulation regions including first top surfaces and second top surfaces lower than the first top surfaces, a semiconductor fin over the first top surfaces of the insulation regions, a gate stack on a top surface and sidewalls of...