ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,164, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device containing constricted channel ends an... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,165, issued on Sept. 1, was assigned to Kepler Computing Inc. (San Francisco). "Etch stop layer based integration process for embedded memo... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,166, issued on Sept. 1, was assigned to Terra Quantum AG (St. Gallen, Switzerland). "Ferroelectric nanoparticle capacitor for non-binary lo... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,167, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Dielectric isolation for MRAM array" was inv... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,168, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetic tunnel junction structures... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,169, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Thermally enhanced selector structu... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,170, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and method of manufacturing the semicond... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,171, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Three dimensional semiconductor dev... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,172, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and manufacturing method of semiconducto... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,173, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device structure and fabrication metho... Read More