ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,165, issued on Sept. 1, was assigned to Kepler Computing Inc. (San Francisco).

"Etch stop layer based integration process for embedded memory" was invented by Noriyuki Sato (Hillsboro, Ore.), Debraj Guhabiswas (Berkeley, Calif.), Tanay Gosavi (Portland, Ore.), Niloy Mukherjee (San Ramon, Calif.), Amrita Mathuriya (Portland, Ore.) and Sasikanth Manipatruni (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed here...