US Patent Issued to International Business Machines on Sept. 1 for "Dielectric isolation for MRAM array" (New York Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,167, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Dielectric isolation for MRAM array" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Koichi Motoyama (Clifton Park, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) includes a pillar structure having a bottom electrode, a magnetic tunnel junction (MTJ) and a top electrode disposed on the MTJ. The MTJ has a reference layer, a free layer and a tunnel barrier disposed between the reference layer and the free layer. The MTJ is disposed on the bottom electrod...