US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Thermally enhanced selector structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,169, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thermally enhanced selector structure and methods of forming the same" was invented by Hung-Ju Li (Hsinchu City, Taiwan), Kuo-Pin Chang (Hsinchu, Taiwan), Yu-Wei Ting (Taipei City, Taiwan), Yu-Sheng Chen (Hsinchu, Taiwan), Ching-En Chen (Chiayi City, Taiwan) and Kuo-Ching Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom el...