US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,168, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic tunnel junction structures and related methods" was invented by Zong-You Luo (Hsinchu, Taiwan), Ya-Jui Tsou (Hsinchu, Taiwan), I-Cheng Tung (Hsinchu, Taiwan) and CheeWee Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules o...