ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,173, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Memory device structure and fabrication method" was invented by Liang Chen (Wuhan, China) and Wei Liu (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a 3D memory device includes forming an array wafer based on a first substrate having at least one cell region for forming a plurality of memory cells and at least one string structure region for forming a string structure; forming a first complementary metal-oxide-semiconductor (CMOS) wafer based on a second substrate having at least one string driver region corresponding to t...