ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,550, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device with defect-free slits" was invented by Ho... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,551, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage device" was invented by Go Oike (Mie Mie, Japan). A... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,552, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan), NATIONAL TAIWAN UNIVERSITY (Tai... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,553, issued on April 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan). "Semiconductor device and electro... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,554, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-storage element single-transistor crosspoint memory sys... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,555, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multilayered magnetic free layer structure... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,556, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor device and method for manuf... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,557, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device" was invented by El... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,558, issued on April 21, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai). "ReRAM device and method for manufacturing the ... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,559, issued on April 21, was assigned to DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY (Daegu, South Korea). "Non-volatile memory de... Read More