ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,555, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM" was invented by Daniel Worledge (San Jose, Calif.) and Guohan Hu (Yorktown Heights, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free la...