US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITY on April 21 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,552, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan), NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan) and NATIONAL TAIWAN NORMAL UNIVERSITY (Taipei, Taiwan).

"Memory device and method for forming the same" was invented by Kuan-Ting Chen (Taichung City, Taiwan), Chun-Yu Liao (Taipei City, Taiwan), Kuo-Yu Hsiang (Kaohsiung City, Taiwan), Yun-Fang Chung (Miaoli County, Taiwan), Min-Hung Lee (Taipei City, Taiwan) and Shu-Tong Chang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor layer over a substrate; depositing a first ferroelectric layer ...