ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,557, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Elia Ambrosi (Hsinchu City, Taiwan), Xinyu Bao (Fremont, Calif.) and Cheng-Hsien Wu (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes memory cells. Each of the memory cells includes: a resistance variable storage device; and a selector. The selector is stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and includes a switching layer formed of a chalcogenide compou...