US Patent Issued to Shanghai Huali Microelectronics on April 21 for "ReRAM device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,558, issued on April 21, was assigned to Shanghai Huali Microelectronics Corp. (Shanghai).

"ReRAM device and method for manufacturing the same" was invented by Zhi Tian (Shanghai), Haoyu Chen (Shanghai) and Hua Shao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a ReRAM device, the bottom surface of a first resistance switching layer is connected with a bottom electrode, and a first groove is formed in the center of the top surface of the first resistance switching layer. A second resistance switching layer is formed on the first resistance switching layer, the center of the bottom surface of the second r...