US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor device and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,556, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor device and method for manufacturing same" was invented by Wei Chang (Hefei, China) and Qingsong Du (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate and a memory cell located on a surface of the semiconductor substrate; the semiconductor substrate comprises a well area, an isolation structure, a first doped area and a second doped area; the isolation structure, the first doped area and the second doped area are located in the well area, and the isolation structure at lea...